![[IEEE 2008 9th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT) - Beijing, China (2008.10.20-2008.10.23)] 2008 9th International Conference on Solid-State and Integrated-Circuit Technology - A new process for self-aligned silicon-on-insulator with block oxide and its memory application for 1T-DRAM]()
[IEEE 2008 9th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT) - Beijing, China (2008.10.20-2008.10.23)] 2008 9th International Conference on Solid-State and Integrated-Circuit Technology - A new process for self-aligned silicon-on-insulator with block oxide and its memory application for 1T-DRAMYi-Ming Tseng, ; Jyi-Tsong Lin, ; Yi-Chuen Eng, ; Shiang-Shi Kang, ; Hung-Jen Tseng, ; Ying-Chieh Tsai, ; Bao-Tang Jheng, ; Po-Hsieh Lin, · 2008