[IEEE 2013 Spanish Conference on Electron Devices (CDE) - Valladolid, Spain (2013.02.12-2013.02.14)] 2013 Spanish Conference on Electron Devices - Electrical properties of silicon supersaturated with titanium or vanadium for intermediate band material

Garcia-Hemme, E.; Garcia-Hernansanz, R.; Olea, J.; Pastor, D.; del Prado, A.; Martil, I.; Gonzalez-Diaz, G.; Garcia-Hemme, E.; Garcia-Hernansanz, R.; Olea, J.; Pastor, D.; Martil, I.; Wahnon, P.; Olea, J.; Pastor, D.; Wahnon, P.

作者Garcia-Hemme, E.; Garcia-Hernansanz, R.; Olea, J.; Pastor, D.; del Prado, A.; Martil, I.; Gonzalez-Diaz, G.; Garcia-Hemme, E.; Garcia-Hernansanz, R.; Olea, J.; Pastor, D.; Martil, I.; Wahnon, P.; Olea, J.; Pastor, D.; Wahnon, P.
文件大小554.19KB
发表时间2013
DOI10.1109/cde.2013.6481421
页码377-380

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[IEEE 2013 Spanish Conference on Electron Devices (CDE) - Valladolid, Spain (2013.02.12-2013.02.14)] 2013 Spanish Conference on Electron Devices - Electrical properties of silicon supersaturated with titanium or vanadium for intermediate band material