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[IEEE 2013 IEEE 10th International Conference on ASIC (ASICON 2013) - Shenzhen, China (2013.10.28-2013.10.31)] 2013 IEEE 10th International Conference on ASIC - Conduction mechanism of self-rectifying n<sup>+</sup>Si-HfO<inf>2</inf>-Ni RRAM

[IEEE 2013 IEEE 10th International Conference on ASIC (ASICON 2013) - Shenzhen, China (2013.10.28-2013.10.31)] 2013 IEEE 10th International Conference on ASIC - Conduction mechanism of self-rectifying n+Si-HfO2-Ni RRAM

Lu, D.Y.; Tran, X.A.; Yu, H.Y.; Huang, D.M.; Lin, Y.Y.; Ding, S.J.; Wang, P.F.; Ming-Fu Li,
  • 作者Lu, D.Y.; Tran, X.A.; Yu, H.Y.; Huang, D.M.; Lin, Y.Y.; Ding, S.J.; Wang, P.F.; Ming-Fu Li,
  • 文件大小423.08KB
  • 发表时间2013
  • DOI10.1109/asicon.2013.6811967
  • 页码1-4
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