Point Defects in 4H-SiC Epilayers Introduced by 4.5 MeV Electron Irradiation and their Effect on Power JBS SiC Diode Characteristics
- 期刊名称Solid State Phenomena
- 作者Hazdra, Pavel; Záhlava, Vít; Vobecký, Jan
- 电子ISSN1662-9779
- 文件大小367.43KB
- 发表时间2013-10
- DOI10.4028/www.scientific.net/SSP.205-206.451
- 页码451-456
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