Effects of forming gas anneal on ultrathin InGaAs nanowire metal-oxide-semiconductor field-effect transistors

• 期刊名称Applied Physics Letters
• 作者Si, Mengwei; Gu, Jiangjiang J.; Wang, Xinwei; Shao, Jiayi; Li, Xuefei; Manfra, Michael J.; Gordon, Roy G.; Ye, Peide D.
• 卷第102卷
• 期第9期
• 印刷ISSN0003-6951
• 文件大小1563.57KB
• 发表时间2013
• DOI10.1063/1.4794846