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Numerical Analysis of Breakdown Voltage Enhancement in AlGaN/GaN HEMTs With a High-<formula formulatype=

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Numerical Analysis of Breakdown Voltage Enhancement in AlGaN/GaN HEMTs With a High-$k$ Passivation Layer

Hanawa, Hideyuki; Onodera, Hiraku; Nakajima, Atsushi; Horio, Kazushige

期刊名称IEEE Transactions on Electron Devices
作者Hanawa, Hideyuki; Onodera, Hiraku; Nakajima, Atsushi; Horio, Kazushige
卷第61卷
期第3期
印刷ISSN0018-9383
电子ISSN1557-9646
文件大小3130.95KB
发表时间2014-03
DOI10.1109/TED.2014.2298194
页码769-775

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