Enhanced internal gettering in n/n+epitaxial silicon wafer: coaction of nitrogen impurity and vacancy on oxygen precipitation in substrate
- 期刊名称Journal of Materials Science: Materials in Electronics
- 作者Dong, Peng; Liang, Xingbo; Tian, Daxi; Zhao, Jianjiang; Gao, Chao; Ma, Xiangyang; Yang, Deren
- 卷第25卷
- 期第8期
- 印刷ISSN0957-4522
- 电子ISSN1573-482X
- 文件大小757.76KB
- 发表时间2014-08-14
- DOI10.1007/s10854-014-2043-7
- 页码3486-3491
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