Simulation of the superlinearity of dose characteristics of thermoluminescence of anion-defective aluminum oxide
- 期刊名称Physics of the Solid State
- 作者Nikiforov, S. V.; Kortov, V. S.; Kazantseva, M. G.
- 卷第56卷
- 期第3期
- 印刷ISSN1063-7834
- 电子ISSN1090-6460
- 文件大小399.60KB
- 发表时间2014-03
- DOI10.1134/S1063783414030214
- 页码554-560
Single-frequency tunable semiconductor lasersDuraev, V. P.; Medvedev, S. V. · Semiconductors · 2014
Pseudomorphic GeSn/Ge (001) heterostructuresTonkikh, A. A.; Talalaev, V. G.; Werner, P. · Semiconductors · 2013
Semiconductor behavior of nanocrystalline carbonBrantov, S. K. · Semiconductors · 2014
The Hall conductivity of grapheneMousavi, Hamze; Behroozi, Samad · Semiconductors · 2014
Optical properties of GaAsAkinlami, J. O.; Ashamu, A. O. · Journal of Semiconductors · 2013
SPT <sup>+</sup> -IGBT characteristics and optimizationChu, Weili; Zhu, Yangjun; Zhang, Jie; Hu, Aibin · Journal of Semiconductors · 2013
Two different LNA optimizing techniquesQin, Chuan; Chen, Lan; Wu, Yuping · Journal of Semiconductors · 2011
Substitutional 3d Impurities in Cubic Silicon CarbideParfenova, I. I. · Semiconductors · 2004