Influence of metal electrode stoichiometry on the electron barrier height at CuxTe1−x/Al2O3 interfaces for CBRAM applications
- 期刊名称Microelectronic Engineering
- 作者De Stefano, Francesca; Afanas’ev, Valeri V.; Houssa, Michel; Goux, Ludovic; Opsomer, Karl; Jurczak, Małgorzata; Stesmans, Andre
- 卷第120卷
- 印刷ISSN0167-9317
- 文件大小632.14KB
- 发表时间2014-05
- DOI10.1016/j.mee.2013.08.016
- 页码9-12
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