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A Novel Robust and Low-Leakage SRAM Cell With Nine Carbon Nanotube Transistors

A Novel Robust and Low-Leakage SRAM Cell With Nine Carbon Nanotube Transistors

Sun, Yanan; Jiao, Hailong; Kursun, Volkan

期刊名称IEEE Transactions on Very Large Scale Integration (VLSI) Systems
作者Sun, Yanan; Jiao, Hailong; Kursun, Volkan
印刷ISSN1063-8210
电子ISSN1557-9999
文件大小5224.62KB
发表时间2014
DOI10.1109/TVLSI.2014.2350674
页码1-1

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