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600 V-18 A GaN Power MOS-HEMTs on 150 mm Si Substrates With Au-Free Electrodes

600 V-18 A GaN Power MOS-HEMTs on 150 mm Si Substrates With Au-Free Electrodes

Seo, Deok Won; Choi, Hong Goo; Twynam, John; Kim, Ki Min; Yim, Jeong Soon; Moon, Sung-Woon; Jung, Sungdal; Lee, Jongsub; Roh, Sungwon D.
  • 期刊名称IEEE Electron Device Letters
  • 作者Seo, Deok Won; Choi, Hong Goo; Twynam, John; Kim, Ki Min; Yim, Jeong Soon; Moon, Sung-Woon; Jung, Sungdal; Lee, Jongsub; Roh, Sungwon D.
  • 卷第35卷
  • 期第4期
  • 印刷ISSN0741-3106
  • 电子ISSN1558-0563
  • 文件大小713.25KB
  • 发表时间2014-04
  • DOI10.1109/led.2014.2304587
  • 页码446-448
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