Variability model for forming process in oxygen vacancy modulated high-κ based resistive switching memory devices
Raghavan, Nagarajan; Bosman, Michel; Frey, Daniel D.; Pey, Kin Leong
- 期刊名称Microelectronics Reliability
- 作者Raghavan, Nagarajan; Bosman, Michel; Frey, Daniel D.; Pey, Kin Leong
- 卷第54卷
- 印刷ISSN0026-2714
- 文件大小858.83KB
- 发表时间2014-09
- DOI10.1016/j.microrel.2014.07.118
- 页码2266-2271