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Variability model for forming process in oxygen vacancy modulated high-κ based resistive switching memory devices

Variability model for forming process in oxygen vacancy modulated high-κ based resistive switching memory devices

Raghavan, Nagarajan; Bosman, Michel; Frey, Daniel D.; Pey, Kin Leong
  • 期刊名称Microelectronics Reliability
  • 作者Raghavan, Nagarajan; Bosman, Michel; Frey, Daniel D.; Pey, Kin Leong
  • 卷第54卷
  • 印刷ISSN0026-2714
  • 文件大小858.83KB
  • 发表时间2014-09
  • DOI10.1016/j.microrel.2014.07.118
  • 页码2266-2271
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