[IEEE 2014 IEEE/MTT-S International Microwave Symposium - MTT 2014 - Tampa, FL, USA (2014.6.1-2014.6.6)] 2014 IEEE MTT-S International Microwave Symposium (IMS2014) - 12W/mm with 0.15µm InAlN/GaN HEMTs on SiC technology for K and Ka-Bands applications
- 作者Piotrowicz, S.; Jardel, O.; Chartier, E.; Aubry, R.; Baczkowski, L.; Casbon, M.; Dua, C.; Escotte, L.; Gamarra, P.; Jacquet, J.C.; Michel, N.; Nsele, S.D.; Oualli, M.; Patard, O.; Potier, C.; Di-Forte Poisson, M.A.; Delage, S.L.
- 文件大小769.40KB
- 发表时间2014
- DOI10.1109/mwsym.2014.6848347
- 页码1-3
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