Dopant-site-dependent scattering by dislocations in epitaxial films of perovskite semiconductor BaSnO3

Kim, Useong; Park, Chulkwon; Ha, Taewoo; Kim, Rokyeon; Mun, Hyo Sik; Kim, Hoon Min; Kim, Hyung Joon; Kim, Tai Hoon; Kim, Namwook; Yu, Jaejun; Kim, Kee Hoon; Kim, Jae Hoon; Char, Kookrin

期刊名称APL Materials
作者Kim, Useong; Park, Chulkwon; Ha, Taewoo; Kim, Rokyeon; Mun, Hyo Sik; Kim, Hoon Min; Kim, Hyung Joon; Kim, Tai Hoon; Kim, Namwook; Yu, Jaejun; Kim, Kee Hoon; Kim, Jae Hoon; Char, Kookrin
卷第2卷
期第5期
电子ISSN2166-532X
文件大小1087.02KB
发表时间2014-05-01
DOI10.1063/1.4874895

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Dopant-site-dependent scattering by dislocations in epitaxial films of perovskite semiconductor BaSnO3