Dirac point and transconductance of top-gated graphene field-effect transistors operating at elevated temperature

Hopf, T.; Vassilevski, K. V.; Escobedo-Cousin, E.; King, P. J.; Wright, N. G.; O'Neill, A. G.; Horsfall, A. B.; Goss, J. P.; Wells, G. H.; Hunt, M. R. C.

期刊名称Journal of Applied Physics
作者Hopf, T.; Vassilevski, K. V.; Escobedo-Cousin, E.; King, P. J.; Wright, N. G.; O'Neill, A. G.; Horsfall, A. B.; Goss, J. P.; Wells, G. H.; Hunt, M. R. C.
卷第116卷
期第15期
印刷ISSN0021-8979
电子ISSN1089-7550
文件大小1914.15KB
发表时间2014-10-21
DOI10.1063/1.4898562

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Dirac point and transconductance of top-gated graphene field-effect transistors operating at elevated temperature