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Phonon scattering in strained transition layers for GaN heteroepitaxy

Cho, Jungwan; Li, Yiyang; Hoke, William E.; Altman, David H.; Asheghi, Mehdi; Goodson, Kenneth E.

期刊名称Physical Review B
作者Cho, Jungwan; Li, Yiyang; Hoke, William E.; Altman, David H.; Asheghi, Mehdi; Goodson, Kenneth E.
卷第89卷
期第11期
印刷ISSN1098-0121
电子ISSN1550-235X
文件大小807.44KB
发表时间2014-3-3
DOI10.1103/PhysRevB.89.115301