Effect of Si substrate on interfacial SiO2 scavenging in HfO2/SiO2/Si stacks
Li, Xiuyan; Yajima, Takeaki; Nishimura, Tomonori; Nagashio, Kosuke; Toriumi, Akira
- 期刊名称Applied Physics Letters
- 作者Li, Xiuyan; Yajima, Takeaki; Nishimura, Tomonori; Nagashio, Kosuke; Toriumi, Akira
- 卷第105卷
- 期第18期
- 印刷ISSN0003-6951
- 电子ISSN1077-3118
- 文件大小1965.28KB
- 发表时间2014-11-03
- DOI10.1063/1.4901172