Greatly improved interfacial passivation of in-situ high κ dielectric deposition on freshly grown molecule beam epitaxy Ge epitaxial layer on Ge(100)
- 期刊名称Applied Physics Letters
- 作者Chu, R. L.; Liu, Y. C.; Lee, W. C.; Lin, T. D.; Huang, M. L.; Pi, T. W.; Kwo, J.; Hong, M.
- 卷第104卷
- 期第20期
- 印刷ISSN0003-6951
- 电子ISSN1077-3118
- 文件大小4078.49KB
- 发表时间2014-05-19
- DOI10.1063/1.4879022
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