[IEEE 2014 10th International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM) - Smolenice, Slovakia (2014.10.20-2014.10.22)] The Tenth International Conference on Advanced Semiconductor Devices and Microsystems - Modelling and optimization of GaN capped HEMTs
Faramehr, S.; Igic, P.; Kalna, K.
- 作者Faramehr, S.; Igic, P.; Kalna, K.
- 文件大小243.14KB
- 发表时间2014
- DOI10.1109/asdam.2014.6998668
- 页码1-4