[IEEE 2014 10th International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM) - Smolenice, Slovakia (2014.10.20-2014.10.22)] The Tenth International Conference on Advanced Semiconductor Devices and Microsystems - Gate leakage reduction of AlGaN/GaN MOS-HFETs with HfO2 prepared by ALD

Stoklas, R.; Gregusova, D.; Blaho, M.; Cico, K.; Frohlich, K.; Novak, J.; Kordos, P.

作者Stoklas, R.; Gregusova, D.; Blaho, M.; Cico, K.; Frohlich, K.; Novak, J.; Kordos, P.
文件大小169.00KB
发表时间2014
DOI10.1109/ASDAM.2014.6998664
页码1-4

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