Experimental Study on Breakdown of Mobility Universality in <formula formulatype="inline"><tex>$langle 100rangle$</tex></formula>-Directed (110)-Oriented pMOSFETsShimizu, Ken; Tsutsui, Gen; Januar, Doni; Saraya, Takuya; Hiramoto, Toshiro · IEEE Transactions On Nanotechnology · 2007

[IEEE 2009 IEEE International SOI Conference - Foster City, CA, USA (2009.10.5-2009.10.8)] 2009 IEEE International SOI Conference - Superior ‹110›-directed mobility to ‹100›-directed mobility in ultrathin body (110) nMOSFETsShimizu, Ken; Saraya, Takuya; Hiramoto, Toshiro · 2009

[IEEE 2008 Symposium on VLSI Technology - Honolulu, HI, USA (2008.06.17-2008.06.19)] 2008 Symposium on VLSI Technology - Experimental study of mobility in [110]- and [100]-directed multiple silicon nanowire GAA MOSFETs on (100) SOIJiezhi Chen, ; Takuya Saraya, ; Kousuke Miyaji, ; Ken Shimizu, ; Toshiro Hiramoto, · 2008

[IEEE 2008 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2008.12.15-2008.12.17)] 2008 IEEE International Electron Devices Meeting - Experimental investigation on the origin of direction dependence of Si (110) hole mobility utilizing ultra-thin body pMOSFETsShimizu, Ken; Saraya, Takuya; Hiramoto, Toshiro · 2008