Improved MOSFET characterization technique for single channel length, scaled transistors

• 期刊名称Solid-State Electronics
• 作者Ferdousi, Fahmida; Rios, Rafael; Kuhn, Kelin J.
• 卷第104卷
• 印刷ISSN0038-1101
• 文件大小515.17KB
• 发表时间2015-02
• DOI10.1016/j.sse.2014.10.010
• 页码44-46