发现好书期刊，享受阅读乐趣

海量图书期刊资源，随时随地畅享阅读乐趣

Analytical Model of the Forward Operation of 4H-SiC Vertical DMOSFET in the Safe Operating Temperature Range

Analytical Model of the Forward Operation of 4H-SiC Vertical DMOSFET in the Safe Operating Temperature Range

Licciardo, Gian Domenico; Bellone, Salvatore; Di Benedetto, Luigi
  • 期刊名称IEEE Transactions on Power Electronics
  • 作者Licciardo, Gian Domenico; Bellone, Salvatore; Di Benedetto, Luigi
  • 卷第30卷
  • 期第10期
  • 印刷ISSN0885-8993
  • 电子ISSN1941-0107
  • 文件大小1136.73KB
  • 发表时间2015-10
  • DOI10.1109/TPEL.2014.2376778
  • 页码5800-5809
同作者推荐
同期刊推荐
← 返回【学霸图书馆】主页
© 2026 学霸图书馆 · 让阅读成为习惯