Formation of donor centers upon the annealing of silicon light-emitting structures implanted with oxygen ions

Sobolev, N. A.; Danilov, D. V.; Aleksandrov, O. V.; Loshachenko, A. S.; Sakharov, V. I.; Serenkov, I. T.; Shek, E. I.; Trapeznikova, I. N.

期刊名称Semiconductors
作者Sobolev, N. A.; Danilov, D. V.; Aleksandrov, O. V.; Loshachenko, A. S.; Sakharov, V. I.; Serenkov, I. T.; Shek, E. I.; Trapeznikova, I. N.
卷第49卷
期第3期
印刷ISSN1063-7826
电子ISSN1090-6479
文件大小170.82KB
发表时间2015-3
DOI10.1134/S1063782615030203
页码406-408

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