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Impact of program/erase operation on the performances of oxide-based resistive switching memory

Impact of program/erase operation on the performances of oxide-based resistive switching memory

Wang, Guoming; Long, Shibing; Yu, Zhaoan; Zhang, Meiyun; Li, Yang; Xu, Dinglin; Lv, Hangbing; Liu, Qi; Yan, Xiaobing; Wang, Ming; Xu, Xiaoxin; Liu, Hongtao; Yang, Baohe; Liu, Ming
  • 期刊名称Nanoscale Research Letters
  • 作者Wang, Guoming; Long, Shibing; Yu, Zhaoan; Zhang, Meiyun; Li, Yang; Xu, Dinglin; Lv, Hangbing; Liu, Qi; Yan, Xiaobing; Wang, Ming; Xu, Xiaoxin; Liu, Hongtao; Yang, Baohe; Liu, Ming
  • 卷第10卷
  • 期第1期
  • 印刷ISSN1556-276X
  • 文件大小1490.78KB
  • 发表时间2015
  • DOI10.1186/s11671-014-0721-2
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