GaN metal-oxide-semiconductor field-effect transistors on AlGaN/GaN heterostructure with recessed gate

• 期刊名称Frontiers of Materials Science
• 作者Wang, Qingpeng; Ao, Jin-Ping; Wang, Pangpang; Jiang, Ying; Li, Liuan; Kawaharada, Kazuya; Liu, Yang
• 卷第9卷
• 期第2期
• 印刷ISSN2095-025X
• 电子ISSN2095-0268
• 文件大小905.32KB
• 发表时间2015-6
• DOI10.1007/s11706-015-0286-8
• 页码151-155