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Planar Bulk MOSFETs With Self-Aligned Pocket Well to Improve Short-Channel Effects and Enhance Device Performance

Planar Bulk MOSFETs With Self-Aligned Pocket Well to Improve Short-Channel Effects and Enhance Device Performance

Zhang, Yanbo; Zhu, Huilong; Wu, Hao; Zhang, Yongkui; Zhao, Zhiguo; Zhong, Jian; Yang, Hong; Liang, Qingqing; Wang, Dahai; Li, Junfeng; Jia, Cheng; Liu, Jinbiao; Zhao, Yuyin; Li, Chunlong; Meng, Lingkuan; Hong, Peizhen; Li, Junjie; Xu, Qiang; Gao, Jianfeng; He, Xiaobin; Lu, Yihong; Zhang, Yue; Yang, Tao; Wang, Yao; Cui, Hushan; Zhao, Chao; Yin, Huaxiang; Zhong, Huicai; Yin, Haizhou; Yan, Jiang; Wang, Wenwu; Chen, Dapeng; Yu, Hongyu; Yang, Simon; Ye, Tianchun
  • 期刊名称IEEE Transactions on Electron Devices
  • 作者Zhang, Yanbo; Zhu, Huilong; Wu, Hao; Zhang, Yongkui; Zhao, Zhiguo; Zhong, Jian; Yang, Hong; Liang, Qingqing; Wang, Dahai; Li, Junfeng; Jia, Cheng; Liu, Jinbiao; Zhao, Yuyin; Li, Chunlong; Meng, Lingkuan; Hong, Peizhen; Li, Junjie; Xu, Qiang; Gao, Jianfeng; He, Xiaobin; Lu, Yihong; Zhang, Yue; Yang, Tao; Wang, Yao; Cui, Hushan; Zhao, Chao; Yin, Huaxiang; Zhong, Huicai; Yin, Haizhou; Yan, Jiang; Wang, Wenwu; Chen, Dapeng; Yu, Hongyu; Yang, Simon; Ye, Tianchun
  • 卷第62卷
  • 期第5期
  • 印刷ISSN0018-9383
  • 电子ISSN1557-9646
  • 文件大小2600.08KB
  • 发表时间2015-5
  • DOI10.1109/TED.2015.2410799
  • 页码1411-1418
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