Height reversal of Si micro dot and well patterns during Si nanowire formation by Ag-assisted chemical etching
- 期刊名称Japanese Journal of Applied Physics
- 作者Yamaura, Daichi; Takeuchi, Koji; Lu, Zhiqiang; Arai, Yuki; Ogino, Toshio
- 卷第54卷
- 期第5期
- 印刷ISSN0021-4922
- 电子ISSN1347-4065
- 文件大小492.12KB
- 发表时间2015-05-01
- DOI10.7567/jjap.54.055203
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