Statistics of retention failure in the low resistance state for hafnium oxide RRAM using a Kinetic Monte Carlo approach
- 期刊名称Microelectronics Reliability
- 作者Raghavan, Nagarajan; Frey, Daniel D.; Bosman, Michel; Pey, Kin Leong
- 印刷ISSN0026-2714
- 文件大小1380.58KB
- 发表时间2015-7
- DOI10.1016/j.microrel.2015.06.090
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