An anti-ferroelectric gated Landau transistor to achieve sub-60 mV/dec switching at low voltage and high speed
- 期刊名称Applied Physics Letters
- 作者Karda, Kamal; Jain, Ankit; Mouli, Chandra; Alam, Muhammad Ashraful
- 卷第106卷
- 期第16期
- 印刷ISSN0003-6951
- 电子ISSN1077-3118
- 文件大小880.35KB
- 发表时间2015-04-20
- DOI10.1063/1.4918649
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