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[IEEE 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Hong Kong, China (2015.5.10-2015.5.14)] 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Novel trench-etched double-diffused SiC MOS (TED MOS) for overcoming tradeoff between R<inf>on</inf>A and Q<inf>gd</inf>

[IEEE 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Hong Kong, China (2015.5.10-2015.5.14)] 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Novel trench-etched double-diffused SiC MOS (TED MOS) for overcoming tradeoff between RonA and Qgd

Tega, Naoki; Yoshimoto, Hiroyuki; Hisamoto, Digh; Watanabe, Naoki; Shimizu, Haruka; Sato, Shintaroh; Mori, Yuki; Ishigaki, Takashi; Matsumura, Mieko; Konishi, Kumiko; Kobayashi, Keisuke; Mine, Toshiyuki; Akiyama, Satoru; Fujita, Ryusei; Shima, Akio; Shimamoto, Yasuhiro
  • 作者Tega, Naoki; Yoshimoto, Hiroyuki; Hisamoto, Digh; Watanabe, Naoki; Shimizu, Haruka; Sato, Shintaroh; Mori, Yuki; Ishigaki, Takashi; Matsumura, Mieko; Konishi, Kumiko; Kobayashi, Keisuke; Mine, Toshiyuki; Akiyama, Satoru; Fujita, Ryusei; Shima, Akio; Shimamoto, Yasuhiro
  • 文件大小773.42KB
  • 发表时间2015
  • DOI10.1109/ISPSD.2015.7123394
  • 页码81-84
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