Effect of Barrier Layer Thickness on Gate Leakage Current in AlGaN/GaN HEMTs
- 期刊名称IEEE Transactions on Electron Devices
- 作者Turuvekere, Sreenidhi; DasGupta, Amitava; DasGupta, Nandita
- 卷第62卷
- 期第10期
- 印刷ISSN0018-9383
- 电子ISSN1557-9646
- 文件大小1137.39KB
- 发表时间2015-10
- DOI10.1109/TED.2015.2469151
- 页码3449-3452
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