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Spectral properties of a lateral p–n homojunction-structured visible silicon light-emitting diode fabricated by dressed-photon–phonon-assisted annealing

Spectral properties of a lateral p–n homojunction-structured visible silicon light-emitting diode fabricated by dressed-photon–phonon-assisted annealing

Yamaguchi, M.; Kawazoe, T.; Yatsui, T.; Ohtsu, M.
  • 期刊名称Applied Physics A
  • 作者Yamaguchi, M.; Kawazoe, T.; Yatsui, T.; Ohtsu, M.
  • 卷第121卷
  • 期第4期
  • 印刷ISSN0947-8396
  • 电子ISSN1432-0630
  • 文件大小1302.88KB
  • 发表时间2015-12-21
  • DOI10.1007/s00339-015-9432-5
  • 页码1389-1394
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