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[IEEE 2015 IEEE 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) - Hsinchu (2015.6.29-2015.7.2)] 2015 IEEE 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits - A unified model to understand degradation of a-InGaZnO TFTs under various gate bias stresses with or without light illumination

[IEEE 2015 IEEE 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) - Hsinchu (2015.6.29-2015.7.2)] 2015 IEEE 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits - A unified model to understand degradation of a-InGaZnO TFTs under various gate bias stresses with or without light illumination

Mingxiang Wang, ; Jie Xu, ; Huaisheng Wang, ; Qi Shan,
  • 作者Mingxiang Wang, ; Jie Xu, ; Huaisheng Wang, ; Qi Shan,
  • 文件大小652.05KB
  • 发表时间2015
  • DOI10.1109/IPFA.2015.7224337
  • 页码76-79
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