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Optimization of Si–C reaction temperature and Ge thickness in C-mediated Ge dot formation

Optimization of Si–C reaction temperature and Ge thickness in C-mediated Ge dot formation

Satoh, Yuhki; Itoh, Yuhki; Kawashima, Tomoyuki; Washio, Katsuyoshi

期刊名称Thin Solid Films
作者Satoh, Yuhki; Itoh, Yuhki; Kawashima, Tomoyuki; Washio, Katsuyoshi
印刷ISSN0040-6090
文件大小1075.08KB
发表时间2015-8
DOI10.1016/j.tsf.2015.08.033

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