[IEEE 2015 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC) - Singapore, Singapore (2015.6.1-2015.6.4)] 2015 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC) - GaN HEMT compact model for circuit simulation
Syamal, Binit; Ben Chiah, Siau; Zhou, Xing; Ajaykumar, Arjun; Anand, M. J.; Ng, Geok Ing; Arulkumaran, S.
- 作者Syamal, Binit; Ben Chiah, Siau; Zhou, Xing; Ajaykumar, Arjun; Anand, M. J.; Ng, Geok Ing; Arulkumaran, S.
- 文件大小175.12KB
- 发表时间2015
- DOI10.1109/EDSSC.2015.7285169
- 页码535-538