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[IEEE 2015 IEEE 15th International Conference on Nanotechnology (IEEE-NANO) - Rome, Italy (2015.7.27-2015.7.30)] 2015 IEEE 15th International Conference on Nanotechnology (IEEE-NANO) - Investigation and benchmark of intrinsic drain-induced-barrier-lowering (DIBL) for ultra-thin-body III–V-on-insulator n-MOSFETs

[IEEE 2015 IEEE 15th International Conference on Nanotechnology (IEEE-NANO) - Rome, Italy (2015.7.27-2015.7.30)] 2015 IEEE 15th International Conference on Nanotechnology (IEEE-NANO) - Investigation and benchmark of intrinsic drain-induced-barrier-lowering (DIBL) for ultra-thin-body III–V-on-insulator n-MOSFETs

Yu, Chang-Hung; Su, Pin

作者Yu, Chang-Hung; Su, Pin
文件大小278.78KB
发表时间2015
DOI10.1109/NANO.2015.7388693
页码666-669

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