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Interface morphology and composition of Ga(NAsP) quantum well structures for monolithically integrated LASERs on silicon substrates

Interface morphology and composition of Ga(NAsP) quantum well structures for monolithically integrated LASERs on silicon substrates

Wegele, Tatjana; Beyer, Andreas; Ludewig, Peter; Rosenow, Phil; Duschek, Lennart; Jandieri, Kakhaber; Tonner, Ralf; Stolz, Wolfgang; Volz, Kerstin
  • 期刊名称Journal of Physics D: Applied Physics
  • 作者Wegele, Tatjana; Beyer, Andreas; Ludewig, Peter; Rosenow, Phil; Duschek, Lennart; Jandieri, Kakhaber; Tonner, Ralf; Stolz, Wolfgang; Volz, Kerstin
  • 卷第49卷
  • 期第7期
  • 印刷ISSN0022-3727
  • 电子ISSN1361-6463
  • 文件大小1155.90KB
  • 发表时间2016-02-25
  • DOI10.1088/0022-3727/49/7/075108
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