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Investigations on the Gate-Induced Drain Leakage Current of Polycrystalline-Silicon Thin-Film Transistor and Its Suppression With Drain Bias Sweep

Investigations on the Gate-Induced Drain Leakage Current of Polycrystalline-Silicon Thin-Film Transistor and Its Suppression With Drain Bias Sweep

Zhang, Dongli; Wang, Mingxiang; Wang, Huaisheng; Shan, Qi

期刊名称IEEE Transactions on Electron Devices
作者Zhang, Dongli; Wang, Mingxiang; Wang, Huaisheng; Shan, Qi
印刷ISSN0018-9383
电子ISSN1557-9646
文件大小2334.10KB
发表时间2016
DOI10.1109/TED.2016.2533162
页码1-6

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