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[IEEE 2016 IEEE 16th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) - Austin, TX, USA (2016.1.24-2016.1.27)] 2016 IEEE 16th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) - A 110–132GHz VCO with 1.5dBm peak output power and 18.2% tuning range in 130nm SiGe BiCMOS for D-Band transmitters

[IEEE 2016 IEEE 16th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) - Austin, TX, USA (2016.1.24-2016.1.27)] 2016 IEEE 16th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) - A 110–132GHz VCO with 1.5dBm peak output power and 18.2% tuning range in 130nm SiGe BiCMOS for D-Band transmitters

Muralidharan, Sriram; Wu, Kefei; Hella, Mona

作者Muralidharan, Sriram; Wu, Kefei; Hella, Mona
文件大小776.22KB
发表时间2016
DOI10.1109/SIRF.2016.7445469
页码64-66

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