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Dielectric engineered symmetric underlap double gate tunnel FET (DGTFET): An investigation towards variation of dielectric materials

Dielectric engineered symmetric underlap double gate tunnel FET (DGTFET): An investigation towards variation of dielectric materials

Mallikarjunarao, ; Ranjan, Rajeev; Pradhan, K.P.; Sahu, P.K.
  • 期刊名称Superlattices and Microstructures
  • 作者Mallikarjunarao, ; Ranjan, Rajeev; Pradhan, K.P.; Sahu, P.K.
  • 卷第96卷
  • 印刷ISSN0749-6036
  • 文件大小1375.54KB
  • 发表时间2016-08
  • DOI10.1016/j.spmi.2016.05.035
  • 页码226-233
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