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Growth of Si Bulk Crystals with Large Diameter Ratio Using Small Crucibles by Creating a Large Low-Temperature Region Inside a Si Melt Contained in an NOC Furnace Developed Using Two Zone Heaters

Growth of Si Bulk Crystals with Large Diameter Ratio Using Small Crucibles by Creating a Large Low-Temperature Region Inside a Si Melt Contained in an NOC Furnace Developed Using Two Zone Heaters

Nakajima, Kazuo; Ono, Satoshi; Murai, Ryota; Kaneko, Yuzuru

期刊名称Journal of Electronic Materials
作者Nakajima, Kazuo; Ono, Satoshi; Murai, Ryota; Kaneko, Yuzuru
卷第45卷
期第6期
印刷ISSN0361-5235
电子ISSN1543-186X
文件大小4599.41KB
发表时间2016-6
DOI10.1007/s11664-016-4463-z
页码2837-2846

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