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Trapping States in SiO<sub>2</sub>/GaN MOS Capacitors Fabricated on Recessed AlGaN/GaN Heterostructures

Trapping States in SiO₂/GaN MOS Capacitors Fabricated on Recessed AlGaN/GaN Heterostructures

Fiorenza, Patrick; Greco, Giuseppe; Iucolano, Ferdinando; Parisi, Antonino; Reina, Santo; Patti, Alfonso; Roccaforte, Fabrizio

期刊名称Materials Science Forum
作者Fiorenza, Patrick; Greco, Giuseppe; Iucolano, Ferdinando; Parisi, Antonino; Reina, Santo; Patti, Alfonso; Roccaforte, Fabrizio
卷第858卷
电子ISSN1662-9752
文件大小400.00KB
发表时间2016-5
DOI10.4028/www.scientific.net/MSF.858.1178
页码1178-1181

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