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Design Rules for High Performance Tunnel Transistors from 2D Materials

Design Rules for High Performance Tunnel Transistors from 2D Materials

Ilatikhameneh, Hesameddin; Klimeck, Gerhard; Appenzeller, Joerg; Rahman, Rajib
  • 期刊名称IEEE Journal of the Electron Devices Society
  • 作者Ilatikhameneh, Hesameddin; Klimeck, Gerhard; Appenzeller, Joerg; Rahman, Rajib
  • 电子ISSN2168-6734
  • 文件大小6370.48KB
  • 发表时间2016
  • DOI10.1109/jeds.2016.2568219
  • 页码1-1
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