Design Rules for High Performance Tunnel Transistors from 2D Materials
Ilatikhameneh, Hesameddin; Klimeck, Gerhard; Appenzeller, Joerg; Rahman, Rajib
- 期刊名称IEEE Journal of the Electron Devices Society
- 作者Ilatikhameneh, Hesameddin; Klimeck, Gerhard; Appenzeller, Joerg; Rahman, Rajib
- 电子ISSN2168-6734
- 文件大小6370.48KB
- 发表时间2016
- DOI10.1109/jeds.2016.2568219
- 页码1-1