[Advances in Intelligent Systems and Computing] Advanced Computing and Communication Technologies Volume 452 || Comparative Study of 7T, 8T, 9T and 10T SRAM with Conventional 6T SRAM Cell Using 180 nm Technology
- 作者Choudhary, Ramesh K.; Mandal, Jyotsna Kumar; Auluck, Nitin; Nagarajaram, H A
- 文件大小997.30KB
- 发表时间2016
- DOI10.1007/978-981-10-1023-1_3
- 页码25-40
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