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Analytical Description of the Input Capacitance of 4H-SiC DMOSFET’s in Presence of Oxide-Semiconductor Interface Traps

Analytical Description of the Input Capacitance of 4H-SiC DMOSFET’s in Presence of Oxide-Semiconductor Interface Traps

Licciardo, Gian Domenico; Di Benedetto, Luigi; Bellone, Salvatore

期刊名称Materials Science Forum
作者Licciardo, Gian Domenico; Di Benedetto, Luigi; Bellone, Salvatore
卷第858卷
电子ISSN1662-9752
文件大小358.15KB
发表时间2016-5
DOI10.4028/www.scientific.net/msf.858.825
页码825-828

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