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Effects of Rare-Earth Element Dopants in High-Mobility InO
<sub/>x</sub>
-Based Thin-Film Transistors

Effects of Rare-Earth Element Dopants in High-Mobility InO _x -Based Thin-Film Transistors

Lin, Zhenguo; Lan, Linfeng; Xiao, Peng; Sun, Sheng; Li, Yuzhi; Song, Wei; Gao, Peixiong; Song, Erlong; Zhang, Peng; Wang, Lei; Ning, Honglong; Peng, Junbiao

期刊名称IEEE Electron Device Letters
作者Lin, Zhenguo; Lan, Linfeng; Xiao, Peng; Sun, Sheng; Li, Yuzhi; Song, Wei; Gao, Peixiong; Song, Erlong; Zhang, Peng; Wang, Lei; Ning, Honglong; Peng, Junbiao
卷第37卷
期第9期
印刷ISSN0741-3106
电子ISSN1558-0563
文件大小725.93KB
发表时间2016-9
DOI10.1109/led.2016.2593485
页码1139-1142

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