[IEEE 2016 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT) - Taipei, Taiwan (2016.8.24-2016.8.26)] 2016 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT) - Electro-thermal-stress analysis of AlGaN/GaN HEMTs breakdown under intentional EMI
Zhou, Liang; San, Zhengwei; Mao, Jun-Fa
- 作者Zhou, Liang; San, Zhengwei; Mao, Jun-Fa
- 文件大小420.52KB
- 发表时间2016
- DOI10.1109/RFIT.2016.7578210
- 页码1-3