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[IEEE 2016 IEEE International Topical Meeting on Microwave Photonics (MWP) - Long Beach, CA, USA (2016.10.31-2016.11.3)] 2016 IEEE International Topical Meeting on Microwave Photonics (MWP) - Heterogeneously integrated InP based evanescently-coupled high-speed and high-power p-i-n photodiodes on silicon-on-insulator (SOI) substrate

[IEEE 2016 IEEE International Topical Meeting on Microwave Photonics (MWP) - Long Beach, CA, USA (2016.10.31-2016.11.3)] 2016 IEEE International Topical Meeting on Microwave Photonics (MWP) - Heterogeneously integrated InP based evanescently-coupled high-speed and high-power p-i-n photodiodes on silicon-on-insulator (SOI) substrate

Hulme, Jared; Kennedy, M. J.; Chao, Rui-Lin; Komljenovic, Tin; Shi, Jin-Wei; Bowers, J. E.
  • 作者Hulme, Jared; Kennedy, M. J.; Chao, Rui-Lin; Komljenovic, Tin; Shi, Jin-Wei; Bowers, J. E.
  • 文件大小311.87KB
  • 发表时间2016
  • DOI10.1109/MWP.2016.7791322
  • 页码233-236
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