[IEEE 2016 11th International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM) - Smolenice, Slovakia (2016.11.13-2016.11.16)] 2016 11th International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM) - Scaling and traps induced degradation of cutoff frequency in GaN HEMT
- 作者Ubochi, B. C.; Faramehr, S.; Ahmeda, K.; Igic, P.; Kalna, K.
- 文件大小442.45KB
- 发表时间2016
- DOI10.1109/ASDAM.2016.7805925
- 页码181-184
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